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Technology for
Design Migration
Design Reuse
Timing and Signal Integrity in UDSM 
Intellectual Property
Physical Verification
Library Generation

Products
LADEE
DECOR
LACE
LACEedit
AutoMask
LayAna
LayNet
BatchComp
CrossSpeed
HierO
P-Rex

AutoMask
The Automatic Layer Manipulation Tool

AutoMask is a tool for automatically creating and modifying an IC mask layout to prepare it for autoamtic compaction, conversion, extraction and verification tasks. It provides an extensive set of predefined macros for the push-button setup of standard and frequently-used functions.
Automask combines net information and mask manipulation for net-related extraction tasks.

Features for Deep-Submicron Technology

Modifying Tab Density
AutoMask automatically takes careof modifying tab density in deep-submicron (DSM) and ultra deep sub-micron (UDSM) technologies, and automatically inserts additional tabs to meet the new technology's requirements.

Device Extraction
AutoMask automatically extracts unlimited number and types of devices for special sizing during a compaction flow. 

Aditional Layers and Phase Shift Masks
DSM and UDSM technologies require additional mask layers that  were rarely seen in previous technologies. AutoMask automatically inserts such additional layers when needed, for example, a phase shift mask. These masks are automatically adjusted during the compaction and conversion process using the LACE tool. AutoMask handles an unlimited number of layers.

Correct Slopes
Some layouts contain edges with angles other than a multiple of 45 degrees (i.e., a non 45-degree edge). These edges have been created by other tools and processing steps. Most design tools and technologies do not accept non 45-degree structures. Automask automatically converts non 45-degree edges to 45-degree edges.

Deep-submicron Rules
Deep-submicron technologies require layout structures that did not exist in previous technologies. for example, a hammer-shaped endgap. Automask automatically analyses the layout and inserts additonal structures as needed to satisfy these deep-submicron rules.
 

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